Opening for four positions:
Application deadline: February 8th, 2008. Reference nr: 2008/6, 2008/7, 2008/8, 2008/9.
High Resolution Analytical Microscopy of Nanostructured Materials- two PhD students and two Postdoctoral positions
The group of Microscopy and Microanalysis, Department of Applied Physics, Chalmers University of Technology is seeking candidates for two PhD student and two Postdoctoral positions in the field of high resolution analytical microscopy of nanostructured materials.
The atomic structures and their influence on the properties will be characterized using state-of-the-art scanning and transmission electron microscopes (SEM and TEM) as well as focused ion beam workstations and in-situ manipulation. The projects are carried out in collaboration with research groups and industrial partners in both Sweden and abroad. The work will include visits of different lengths to other research labs.
Open positions:
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PhD student position- Nanostructured oxides
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PhD student position- Tunnel barriers in nanodevices
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Post Doc position- Tunnel barriers in nanodevices
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Post Doc position- In situ TEM-SPM
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PhD student position - Nanostructured oxides, ref nr 2008/6
The work will be carried out within the framework of a program where the aim is to investigate, control and exploit the properties of interfaces between isostructural functional oxides for the realization of new nanosized electronic and optoelectronic devices. The project will study interfaces between transition metal oxides with perovskite type structure. Most perovskite oxides are correlated electronic systems which offer a rich spectrum of physical properties such as superconductivity, ferromagnetism, ferroelectricity, semiconducting or metallic behaviour. Such properties are present in compounds with the same crystal structure, allowing the engineering of new epitaxial multifunctional devices. Interfaces in such highly correlated systems are very complex due to the collective nature of electronic behaviour and offer new application possibilities with respect to conventional semiconductors.
The project will be focused on selected interfaces in bilayers and heterostructures made of oxides with different functional properties, such as dielectric and superconductors, magnetic and metallic oxides. Interfaces will be realized by epitaxial thin films deposition in state-of-the-art systems that permit to control of the growth at atomic level. The structural, chemical and physical properties of such interfaces will be characterized and modelled. The functional properties of interfaces originating by the proximity of layers with different physical properties will be thoroughly studied.
For informal requests about the project and the position please contact:
Prof. Eva Olsson
Chalmers University of Technology
Dept. Applied Physics
eva.olsson@fy.chalmers.se
Phone: +46-31-772 32 47
- PhD student position - Tunnel barriers in nanodevices, ref. nr 2008/7
The aim of the work is to extract new previously not available information about the origin of noise in nanodevices using high resolution analytical transmission electron microscopy. The activities in the field of nanodevices and tunnel junctions are intense due to the potential for unique applications in, for example, ultrasensitive electrometers and superconducting qubits. Noise limits not only the sensitivity but also cause decoherence in superconducting qubits, which is a severely limiting factor for solid state quantum computing.
The significance of the work is that knowledge about the origin of noise in the tunnel barriers will enable us to develop techniques to inhibit the formation the noise generating features. The research will also provide a basic understanding of the phenomena that control the properties of tunnel barrier junctions and how the junctions can be tailored for specific applications.
The expertise of the supervisors includes i) high resolution structural characterization, in particular direct correlation between properties and structure and ii) experimental mesoscopic physics in general and on single electronics and quantum computing in particular. State-of-the-art instrumentation for structural and electronic characterisation of the nanojunctions including a Fei Titan 80-300 TEM/STEM with a monochromator, probe Cs corrector, high resolution energy filter and bi-prism for off-axis electron holography will be used. The project is funded by VR (the Swedish Research Council).
For informal requests about the project and the position please contact:
Prof. Eva Olsson
Chalmers University of Technology
Dept. Applied Physics
eva.olsson@fy.chalmers.se
Phone: +46-31-772 32 47
Or
Prof. Per Delsing
Chalmers University of Technology
Dept. of MC2
Per.delsing@mc2.chalmers.se
Phone: +46-31-772 33 17
- Post Doc position in Tunnel barriers in nanodevices, ref. nr 2008/8
The aim of the work is to extract new previously not available information about the origin of noise in nanodevices using high resolution analytical transmission electron microscopy. The activities in the field of nanodevices and tunnel junctions are intense due to the potential for unique applications in, for example, ultrasensitive electrometers and superconducting qubits. Noise limits not only the sensitivity but also cause decoherence in superconducting qubits, which is a severely limiting factor for solid state quantum computing.
The significance of the work is that knowledge about the origin of noise in the tunnel barriers will enable us to develop techniques to inhibit the formation the noise generating features. The research will also provide a basic understanding of the phenomena that control the properties of tunnel barrier junctions and how the junctions can be tailored for specific applications.
The expertise of the supervisors includes i) high resolution structural characterization, in particular direct correlation between properties and structure and ii) experimental mesoscopic physics in general and on single electronics and quantum computing in particular. State-of-the-art instrumentation for structural and electronic characterisation of the nanojunctions including a Fei Titan 80-300 TEM/STEM with a monochromator, probe Cs corrector, high resolution energy filter and bi-prism for off-axis electron holography will be used. The project is funded by SSF (the Swedish Foundation for Strategic Research).
For informal requests about the project and the position please contact:
Prof. Eva Olsson
Chalmers University of Technology
Dept. Applied Physics
eva.olsson@fy.chalmers.se
Phone: +46-31-772 32 47
Or
Prof. Per Delsing
Chalmers University of Technology
Dept. of MC2
Per.delsing@mc2.chalmers.se
Phone: +46-31-772 33 17
- Post Doc position - In situ TEM-SPM, ref. nr 2008/9
The postdoctoral position is in the field of combined transmission electron microscopy (TEM) and scanning probe microscopy (SPM) of semiconductor structures. The project aims at developing new methods to apply in situ TEM-SPM techniques for the investigation of nanoscale charge carrier distributions in semiconductor materials.
The work will be carried out in close relationship with Nanofactory Instruments (www.nanofactory.com), who provides the in situ equipment, such as TEM-STM and TEM-AFM instrumentation, and will benefit from Chalmers’ suite of advanced electron microscopes, including an aberration-corrected Fei 80-300 Titan TEM. The project is funded by VINNOVA (Swedish Governmental Agency for Innovation Systems). The Post Doc position is funded for 18 months and is planned to start April 1st 2008.
For informal requests about the project and the position please contact:
Prof. Eva Olsson
Chalmers University of Technology
Dept. Applied Physics
eva.olsson@fy.chalmers.se
Phone: +46-31-772 32 47
or
Dr. Johan Angenete
Nanofactory Instruments AB
johan.angenete@nanofactory.com
Phone: +46-763-414029
Requirements for PhD student positions
The successful applicant must have a Master’s degree (or equivalent) in physics or materials science. As a PhD student you will perform research, study PhD courses and participate in teaching. The time period for the positions is limited to five years.
Requirements for Post Doc positions
PhD degree in Materials Science or Physics. The goal of a Post Doctoral Appointment is primarily that the holder, in close association with having taken a doctoral degree, shall gain research experience from an international, industrial or other similar environment. The time period for the positions is limited for a maximum of two years.
The successful applicant must have an extensive experimental experience in transmission electron microscopy. For ref. nr 2008/9, preferably within the field of semiconductor materials.
Moreover, a working knowledge in one ore more of the following fields is desirable:
- SPM techniques such as scanning tunnelling microscopy (STM) and/or atomic force microscopy (AFM)
- Focused Ion Beam (FIB) specimen preparation
- Scanning Electron Microscopy (SEM)
How to apply
The application should contain a cover letter, which summarizes your qualifications and a complete CV, including grades from undergraduate studies. The application should be collected in one pdf-file. Mark the application with reference number and send it electronically to:
registrator@chalmers.se
To strengthen the gender balance at the department, female applicants are encouraged to apply.
Deadline for applications is February 8th, 2008.
Registrar
Chalmers University of Technology
SE-412 96 Göteborg
E-mail: registrator@chalmers.se
Tel exch: +46 31 7721000
Fax Registrar: +46 31 7724922